Type Designator: SI4688DY
NCE4688 Datasheet(PDF) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd: Part No. NCE4688: Description: N and P-Channel Enhancement Mode Power MOSFET: Download 9 Pages: Scroll/Zoom: 100%: Maker: NCEPOWER Wuxi NCE Power Semiconductor Co., Ltd.
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4688 Mosfet Data
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 1.4 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 8.9 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 10 nS
Drain-Source Capacitance (Cd): 295 pF
Maximum Drain-Source On-State Resistance (Rds): 0.011 Ohm
Package: SO-8
SI4688DY Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI4688DY Datasheet (PDF)
0.1. si4688dy.pdf Size:243K _vishay Alex voxel.
New ProductSi4688DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.011 at VGS = 10 V 12 TrenchFET Power MOSFET300.0145 at VGS = 4.5 V 9.8 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook PC- Core D- System PowerSO-8S D1 8S
9.1. si4682dy.pdf Size:246K _vishay
Si4682DYVishay SiliconixN-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0094 at VGS = 10 V 1630 11 nC Extremely Low Qgd for Low Switching Losses0.0135 at VGS = 4.5 V 13 TrenchFET Power MOSFET 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLI
9.2. si4686dy.pdf Size:235K _vishay
Si4686DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available0.0095 at VGS = 10 V 18.2 Extremely Low Qgd WFET Technology30 9.2 nC0.014 at VGS = 4.5 V 15for Low Switching Losses TrenchFET Power MOSFETs 100 % Rg TestedSO-8APPLICATIONSD
9.3. si4684dy.pdf Size:94K _vishay
Si 4688 Mosfet
Si4684DYVishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.0094 at VGS = 10 V Extremely Low Qgd WFET Technology1630 14 nCfor Low Switching Losses0.0115 at VGS = 4.5 V 14 TrenchFET Power MOSFET 100 % Rg Tested Compliant to RoHS Direc
Datasheet: SI4654DY, SI4660DY, SI4666DY, SI4668DY, SI4670DY, SI4682DY, SI4684DY, SI4686DY, IRF3710, SI4712DY, SI4752DY, SI4774DY, SI4776DY, SI4778DY, SI4800, SI4800BDY, SI4810BDY.
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MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02
Si4688DY Datasheet PDF - Vishay
| Part Number | Si4688DY | |
| Description | N-Channel 30-V (D-S) MOSFET | |
| Manufacturers | Vishay | |
| Logo | ||
There is a preview and Si4688DY download ( pdf file ) link at the bottom of this page. Total ( 6 pages ) | ||
Preview 1 page No Preview Available ! N-Channel 30-V (D-S) MOSFET Vishay Siliconix VDS (V) 30 0.011 at VGS = 10 V ID (A) 9.8 S2 G4 8D 6D Top View Ordering Information: Si4688DY-T1-E3 (Lead (Pb)-free) FEATURES Available • 100 % Rg Tested APPLICATIONS - Core D S ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Symbol Steady State VDS 30 VGS Continuous Drain Current (TJ = 150 °C)a TA = 70 °C 12 8.9 Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Pulse Avalanche Current L = 0.1 mH EAS 20 TA = 25 °C PD 1.6 0.9 TJ, Tstg Unit A W THERMAL RESISTANCE RATINGS Maximum Junction-to-Ambienta Notes: t ≤ 10 s Steady State RthJA Document Number: 69996 Typical 73 Maximum 90 Unit www.vishay.com |
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Vishay Siliconix 1 0.2 0.1 0.02 10- 4 10- 3 10- 1 Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and Document Number: 69996 www.vishay.com Preview 5 Page |
| Information | Total 6 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ Si4688DY.PDF Datasheet ] | |
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Featured Datasheets
| Part Number | Description | Manufacturers |
| Si4688DY | The function is N-Channel 30-V (D-S) MOSFET. | Vishay |
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